InN thin films show transient Pauli blocking for broadband ultrafast optical switching

Recent decades have seen rapid advances in high-intensity laser technology. The combination of laser irradiation and new materials opens exciting perspectives for the design of functional materials and devices. Semiconductors are ideal platforms for generating laser functionality because they can exhibit new features such as ultrafast optical transparency. This effect results from an electronic redistribution of occupancies driven by ultrafast excitation, which manifests itself in a phenomenon called transient Pauli blocking.